Abstract: Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) products are being deployed in a wide range of applications, such as data centers, industrial products, wearable devices and aerospace technologies.

During this talk, we will discuss our work on tuning the STT Magnetic Tunnel Junctions bit to enable unlimited read/write endurance with 20+ years of data retention at extreme temperatures to a One Time Programmable extremely fast writes for configuration and artificial intelligence (AI) applications.

We will describe Everspin’s latest STT-MRAM product family, which is aimed at industrial applications requiring low-latency, high-speed, low bit error rate and high reliability. The STT-MRAM is built on GlobalFoundries’ 28nm Complementary Metal-Oxide-Semiconductor, uses an expanded SPI interface and is offered in densities from 4Mb to 128Mb. This talk addresses enhancements to our STT-MRAM technology to enable automotive applications up to AEC-Q100 Grade 1.

We will present examples of MRAM adoption in the industry and use cases that highlight the benefits of MRAM versus standard memory. We will briefly touch on forward looking technologies in development to address storage and AI applications.